Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5759
Title: In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering
Authors: Cantaş, Ayten
Özyüzer, Gülnur Aygün
Basa, Deepak Kumar
Keywords: Buffer layers
Fourier transform infrared spectroscopy
Gate dielectrics
Deposition
Hafnium oxides
Magnetron sputtering
Issue Date: 28-Aug-2014
Publisher: American Institute of Physics
Source: Cantaş, A., Aygün, G., and Basa, D.K. (2014). In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering. Journal of Applied Physics, 116(8). doi:10.1063/1.4893708
Abstract: We have investigated the reduction of unwanted interfacial SiO2 layer at HfO2/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO2 thin films for possible direct contact between HfO2 thin film and Si substrate, necessary for the future generation devices based on high-κ HfO2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO2 thin films and also to undertake the in-situ characterization of the high-κ HfO2 thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO2 thin films are crystalline although they were deposited at room temperature.
URI: https://doi.org/10.1063/1.4893708
http://hdl.handle.net/11147/5759
ISSN: 0021-8979
1089-7550
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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