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https://hdl.handle.net/11147/5834
Title: | Layer- and strain-dependent optoelectronic properties of hexagonal AlN | Authors: | Keçik, Deniz Bacaksız, Cihan Senger, Ramazan Tuğrul Durgun, Engin |
Keywords: | Graphene Optoelectronic properties Hexagonal aluminum nitride Optoelectronic devices |
Publisher: | American Physical Society | Source: | Keçik, D., Bacaksız, C., Senger, R.T., and Durgun, E. (2015). Layer- and strain-dependent optoelectronic properties of hexagonal AlN. Physical Review B - Condensed Matter and Materials Physics, 92(16). doi:10.1103/PhysRevB.92.165408 | Abstract: | Motivated by the recent synthesis of layered hexagonal aluminum nitride (h-AlN), we investigate its layer- and strain-dependent electronic and optical properties by using first-principles methods. Monolayer h-AlN is a wide-gap semiconductor, which makes it interesting especially for usage in optoelectronic applications. The optical spectra of 1-, 2-, 3-, and 4-layered h-AlN indicate that the prominent absorption takes place outside the visible-light regime. Within the ultraviolet range, absorption intensities increase with the number of layers, approaching the bulk case. On the other hand, the applied tensile strain gradually redshifts the optical spectra. The many-body effects lead to a blueshift of the optical spectra, while exciton binding is also observed for 2D h-AlN. The possibility of tuning the optoelectronic properties via thickness and/or strain opens doors to novel technological applications of this promising material. | URI: | https://doi.org/10.1103/PhysRevB.92.165408 http://hdl.handle.net/11147/5834 |
ISSN: | 1098-0121 1550-235X |
Appears in Collections: | Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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