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https://hdl.handle.net/11147/5835
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Özçeri, Elif | - |
dc.contributor.author | Selamet, Yusuf | - |
dc.date.accessioned | 2017-07-03T10:51:43Z | - |
dc.date.available | 2017-07-03T10:51:43Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.citation | Özçeri, E., and Selamet, Y. (2015). Influence of buffer layers on Ni thin film structure and graphene growth by CVD. Journal of Physics D: Applied Physics, 48(45). doi:10.1088/0022-3727/48/45/455302 | en_US |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.issn | 1361-6463 | - |
dc.identifier.uri | https://doi.org/10.1088/0022-3727/48/45/455302 | - |
dc.identifier.uri | http://hdl.handle.net/11147/5835 | - |
dc.description.abstract | Buffer and/or adhesive layers were used to decrease the dewetting of Ni thin film at graphene growth temperatures of around 900 °C. Depositing a thin buffer (Al2O3) layer onto SiO2/Si substrate significantly reduced the dewetting effect and surface roughness of Ni catalyst film. Thin adhesive (Cr) layers with or without Al2O3 buffer layers increased the texturing in (1 1 1) orientation, which was promoted by growing at an elevated temperature (450 °C). The effects of pretreatment and growth temperature on crystal orientation, grain size and surface roughness of Ni film were analyzed. Our results indicated a large positive correlation coefficient between the film thickness and surface roughness for thinner and non-buffered films, and a negative correlation coefficient between the thickness and 900 °C -annealed film roughness for thicker and buffered films. The graphene coverage was greatly improved over the films grown with Al2O3 and/or Cr layers. In summary, we suggest that growing high quality, large area, 1- or 2-layer graphene on polycrystalline Ni transition metal thin film is optimized by using Al2O3 and/or Cr layers to reduce Ni dewetting, surface roughness, and groove depth while controlling grain size and texturing in (1 1 1) orientation by annealing at 900 °C. | en_US |
dc.description.sponsorship | TUBITAK (TBAG-112T946) | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP Publishing Ltd. | en_US |
dc.relation | info:eu-repo/grantAgreement/TUBITAK/TBAG/112T946 | en_US |
dc.relation.ispartof | Journal of Physics D: Applied Physics | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | CVD | en_US |
dc.subject | Buffered growth | en_US |
dc.subject | Film pretreatment | en_US |
dc.subject | Graphene | en_US |
dc.subject | Thin films | en_US |
dc.subject | Polycrystalline | en_US |
dc.subject | Transition metals | en_US |
dc.title | Influence of buffer layers on Ni thin film structure and graphene growth by CVD | en_US |
dc.type | Article | en_US |
dc.authorid | TR160243 | en_US |
dc.institutionauthor | Özçeri, Elif | - |
dc.institutionauthor | Selamet, Yusuf | - |
dc.department | İzmir Institute of Technology. Physics | en_US |
dc.identifier.volume | 48 | en_US |
dc.identifier.issue | 45 | en_US |
dc.identifier.wos | WOS:000367070000017 | en_US |
dc.identifier.scopus | 2-s2.0-84947125214 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.doi | 10.1088/0022-3727/48/45/455302 | - |
dc.relation.doi | 10.1088/0022-3727/48/45/455302 | en_US |
dc.coverage.doi | 10.1088/0022-3727/48/45/455302 | en_US |
dc.identifier.wosquality | Q2 | - |
dc.identifier.scopusquality | Q1 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
item.openairetype | Article | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
crisitem.author.dept | 04.05. Department of Pyhsics | - |
Appears in Collections: | Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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