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Title: MBE-grown CdTe layers on GaAs with in-assisted thermal deoxidation
Authors: Arı, Ozan
Bilgilisoy, Elif
Özçeri, Elif
Selamet, Yusuf
Keywords: CdTe growth
GaAs deoxidation
X-ray diffraction
Cadmium telluride
Gallium arsenide
Issue Date: 1-Oct-2016
Publisher: Springer Verlag
Source: Arı, O., Bilgilisoy, E., Özçeri, E., and Selamet, Y. (2016). MBE-grown CdTe layers on GaAs with in-assisted thermal deoxidation. Journal of Electronic Materials, 45(10), 4736-4741. doi:10.1007/s11664-016-4418-4
Abstract: Molecular beam epitaxy (MBE) growth of thin (∼2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm−2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.
ISSN: 0361-5235
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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