Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/8879
Title: Temperature and gate dependence of carrier diffusion in single crystal methylammonium lead Iodide perovskite microstructures
Authors: McClintock, Luke
Xiao, Rui
Hou, Yasen
Gibson, Clinton
Travaglini, Henry Clark
Abramovitch, David
Tan, Liang Z.
Senger, Ramazan Tuğrul
Fu, Yongping
Jin, Song
Issue Date: 2020
Publisher: American Chemical Society
Abstract: We investigate temperature-dependent photogenerated carrier diffusion in single-crystal methylammonium lead iodide microstuctures via scanning photocurrent microscopy, Carrier diffusion lengths increased abruptly across the tetragonal to orthorhombic phase transition and reached 200 +/- 50 mu m at 80 K. In combination with the microsecond carrier lifetime measured by a transient photocurrent method, an enormous carrier mobility value of 3 x 10(4) cm(2)/V s was extracted at 80 K. The observed highly nonlocal photocurrent and the rapid increase of the carrier diffusion length at low temperatures can be understood by the formation and efficient transport of free excitons in the orthorhombic phase as a result of reduced optical phonon scattering due to the dipolar nature of the excitons. Carrier diffusion lengths were tuned by a factor of 8 by gate voltage and increased with increasing majority carrier (electron) concentration, consistent with the exciton model.
URI: https://doi.org/10.1021/acs.jpclett.9b03643
https://hdl.handle.net/11147/8879
ISSN: 1948-7185
Appears in Collections:Physics / Fizik
PubMed İndeksli Yayınlar Koleksiyonu / PubMed Indexed Publications Collection
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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