Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7528
Title: Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes
Authors: Aydın, Hasan
Bacaksız, Cihan
Yağmurcukardeş, Nesli
Karakaya, Caner
Mermer, Ömer
Can, Mustafa
Şenger, Ramazan Tuğrul
Şahin, Hasan
Selamet, Yusuf
Keywords: Graphene
Schottky diode
Self assembled monolayers
Aromatic compounds
Silicon compounds
Issue Date: Jan-2018
Publisher: Elsevier Ltd.
Source: Aydın, H., Bacaksız, C., Yağmurcukardeş, N., Karakaya, C., Mermer, Ö., Can, M., Senger, R. T., Şahin, H., and Selamet, Y. (2018). Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes. Applied Surface Science, 428, 1010-1017. doi:10.1016/j.apsusc.2017.09.204
Abstract: We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.
URI: https://doi.org/10.1016/j.apsusc.2017.09.204
https://hdl.handle.net/11147/7528
ISSN: 0169-4332
0169-4332
1873-5584
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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