Browsing by Author Güneş, Mehmet

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Issue DateTitleAuthor(s)
20031/f noise in amorphous silicon and silicon-germanium alloysJohanson, Robert E.; Güneş, Mehmet ; Kasap, Safa O.
May-20001/f Noise in doped and undoped amorphous siliconJohanson, Robert E.; Güneş, Mehmet ; Kasap, Safa O.
Aug-20031/f noise in hydrogenated amorphous silicon-germanium alloysJohanson, Robert E.; Güneş, Mehmet ; Kasap, Safa O.
19991/f-noise study of undoped intrinsic hydrogenated amorphous silicon thin filmsGüneş, Mehmet ; Johanson, Robert E.; Kasap, Safa O.
2005Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitorsÖzdağ, Pınar
Oct-2003Conductance fluctuations in a-Si:H: Effects of alloying and device structureKasap, Safa O.; Güneş, Mehmet ; Johanson, Robert E.; Wang, Q.; Yang, Jeffrey; Guha, Subhendu
Apr-2002Conductance fluctuations in undoped hydrogenated amorphous silicon-germanium alloy thin filmsGüneş, Mehmet ; Johanson, Robert E.; Kasap, Safa O.; Yang, Jeffrey C.; Guha, Subhendu
May-2000Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniquesGüneş, Mehmet ; Johanson, Robert E.; Kasap, Safa O.
Oct-2003Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin filmsGüneş, Mehmet ; Johanson, Robert E.; Kasap, Safa O.; Finger, Friedhelm; Lambertz, Andreas
Apr-1997Differences in the densities of charged defect states and kinetics of Staebler-Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin filmsGüneş, Mehmet ; Wronski, Christopher R.
Apr-2006Diffusion length measurements of microcrystalline silicon thin films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD)Okur, Salih ; Güneş, Mehmet ; Finger, Friedhelm; Carius, Reinhard
2005The effects of deposition conditions on the low energy absorption spectrum of microcrystalline silicon thin films prepared by HWCVD methodIşık, Nebile
2005The effects of native and light induced defects in the optical and electronic properties of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy thin filmsDönertaş Yavaş, Medine Elif
Feb-2010The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin filmsGüneş, Mehmet ; Yavaş, Mert; Klomfaß, Josef; Finger, Friedhelm
Feb-2005The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitorsÖzdağ, Pınar; Atanassova, Elena; Güneş, Mehmet 
2007The effects of prior nitridation process of silicon surface and different metal gates on the Capacitance Voltage Characteristics of metal-Ta2O5-Si MOS capacitorÖzben, Eylem Durğun
Mar-2004Electronic transport properties of microcrystalline silicon thin films prepared by VHF-PECVDOkur, Salih ; Güneş, Mehmet ; Göktaş, Oktay; Finger, Friedhelm; Carius, Reinhard
Feb-2005Instability phenomena in microcrystalline silicon filmsFinger, Friedhelm; Carius, Reinhard; Dylla, Thorsten; Klein, Stefan; Okur, Salih ; Güneş, Mehmet 
Feb-2005Light induced degradation of hydrogenated amorphous silicon - Germanium alloy (a-SiGe:H) thin filmsDönertaş, M. Elif; Güneş, Mehmet 
2003Low temperature photoconductivity of hydrogenated amorphous silicon (a-Si:H) thin flimsErdoğan, Gökhan